PD Dr. M. Feneberg

PD Dr. rer. nat. Martin Feneberg

Fakultät für Naturwissenschaften (FNW)
Abteilung Materialphysik
Laborleiter
Gebäude 16, Universitätsplatz 2, 39106 Magdeburg, G16-039
Profile
Publikationen

2019

Begutachteter Zeitschriftenartikel

Feneberg, Martin;  Lidig, Christian;  White, Mark E.;  Tsai, Min Y.;  Speck, James S.;  Bierwagen, Oliver;  Galazka, Zbigniew;  Goldhahn, Rüdiger 

Anisotropic optical properties of highly doped rutile SnO 2 - valence band contributions to the Burstein-Moss shift
In: APL materials: high impact open access journal in functional materials science - Melville, NY: AIP Publ, Vol. 7.2019, 2, Art. 022508

Feneberg, Martin;  Bläsing, Jürgen;  Sekiyama, Takahito;  Ota, Katsuya;  Akaiwa, Kazuaki;  Ichino, Kunio;  Goldhahn, Rüdiger 

Anisotropic phonon properties and effective electron mass in α-Ga 2O 3
In: Applied physics letters- Melville, NY: American Inst. of Physics, 1962, Vol. 114.2019, 4, Art. 142102, insgesamt 5 Seiten

2018

Abstrakt

Kuznetsov, Sergey;  Feneberg, Martin;  Goldhahn, Rüdiger 

Characterization of the dielectric function of RScO3 type scandates
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, Art. DS 3.10

Feneberg, Martin 

Influence of many-body effects on optical properties of III-Nitrides
In: Reliable and quantitative prediction of defect properties in Ga-based semiconductors: October 8-12, 2018 - CECAM

Feneberg, Martin 

Optical properties of metastable polytypes of Ga2O3
In: SPIE Photonics West: San Francisco, USA, 27 January - 1 February 2018 - SPIE ; [Konferenz: Optoelectronics, Photonic Materials and Devices Conference, OPTO, San Francisco, USA, 27.01.-01.02. 2018]

Feneberg, Martin 

Optical properties of transparent conducting oxides from mid-infrared to vacuum-ultraviolet
In: E-MRS 2018 Fall Meeting, Symposium R: New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing - eMSR, 2018, Art. R. 10.7

Winkler, Michael;  Feneberg, Martin;  Chichibu, Shigefusa F.;  Collazo, Ramón;  Sitar, Zlatko;  Neumann, Maciej D.;  Esser, Norbert;  Goldhahn, Rüdiger 

Parametric model for the anisotropic dielectric function of m-plane AlGaN up to 20eV
In: Verhandlungen der Deutschen Physikalischen Gesellschaft e. V. Berlin 2018 - Bad Honnef: DPG, 2018, Art. HL27.10

Baron, Elias;  Feneberg, Martin;  Goldhahn, Rüdiger;  Deppe, Michael;  As, Donat J. 

Plasmonic properties of degenerately Ge-Doped Cubic GaN
In: WSE 10: Workshop Ellipsometry, March 19 - 21, 2018, Chemnitz, Germany : abstract-book - Chemnitz, S. 36 ; [Workshop Ellipsometry, WSE 10, Chemnitz, 19-21 March 2018]

Feneberg, Martin;  Baron, Elias;  Kluth, Elias;  Lange, Karsten;  Donat, As;  Deppe, Michael;  Tacken, Fabian;  Wieneke, Matthias;  Bläsing, Jürgen;  Witte, Hartmut;  Dadgar, Armin;  Goldhahn, Rüdiger 

Revision of the TO phonon frequencies in wurtzite and zincblende GaN
In: IWN 2018: International Workshop on Nitride Semiconductors, November 11-16, 2018, Kanazawa, Japan - Kanazawa ; [Workshop: International Workshop on Nitride Semiconductors, IWN 2018, November 11-16, 2018]

Papadogianni, Alexandra;  Nagata, Takahiro;  Wouters, Charlotte;  Albrecht, Martin;  Feldl, Johannes;  Ramsteiner, Manfred;  Feneberg, Martin;  Goldhahn, Rüdiger;  Bierwagen, Oliver 

Structural, optical and electronic properties of single-crystalline (In1-xGax)2O3 thin films in the low-x bixbyite phase end
In: 7th International Symposium Transparent Conductive Materials, E-MRS & MRS-J Bilateral Symposium Advanced Oxides and Wide Bandgap Semiconductors: 14-19 October 2018, Crete, Greece ; Abstract book - TCM, 2018, TCM-O45.ID-10, S. 171

Begutachteter Zeitschriftenartikel

Kracht, M.;  Karg, A.;  Feneberg, Martin;  Bläsing, Jürgen;  Schörmann, J.;  Goldhahn, Rüdiger;  Eickhoff, M. 

Anisotropic optical properties of metastable (0112)α Ga2O3 grown by plasma-assisted molecular beam epitaxy
In: Physical review applied - College Park, Md. [u.a.]: American Physical Society, Vol. 10.2018, 2, Art. 024047

Schleife, André;  Neumann, Maciej D.;  Esser, Norbert;  Galazka, Zbigniew;  Gottwald, Alexander;  Nixdorf, Jakob;  Goldhahn, Rüdiger;  Feneberg, Martin 

Optical properties of In 2O 3 from experiment and first-principles theory - influence of lattice screening
In: New journal of physics: the open-access journal for physics - [Bad Honnef]: Dt. Physikalische Ges, Vol. 20.2018, Art. 053016, insgesamt 13 S.

Feneberg, Martin;  Nixdorf, Jakob;  Neumann, Maciej D.;  Esser, Norbert;  Artús, Lluis;  Cuscó, Ramon;  Yamaguchi, Tomohiro;  Goldhahn, Rüdiger 

Ordinary dielectric function of corundumlike α Ga 2O 3 from 40 meV to 20 eV
In: Physical review materials - College Park, MD: APS, Vol. 2.2018, 4, Art. 044601

Budde, Melanie;  Tschammer, Carsten;  Franz, Philipp;  Feldl, Johannes;  Ramsteiner, Manfred;  Goldhahn, Rüdiger;  Feneberg, Martin;  Barsan, Nicolae;  Oprea, Alexandru;  Bierwagen, Oliver 

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 123.2018, 19, Art. 195301, insgesamt 19 S.

Feneberg, Martin;  Winkler, Michael;  Lange, Karsten;  Wieneke, Matthias;  Witte, Hartmut;  Dadgar, Armin;  Goldhahn, Rüdiger 

Valence band tomography of wurtzite GaN by spectroscopic ellipsometry
In: Applied physics express: APEX - Tokyo: Ōyō Butsuri-Gakkai, Vol. 11.2018, 10, Art. 101001

2017

Begutachteter Zeitschriftenartikel

Segura, A.;  Artús, L.;  Cuscó, R.;  Goldhahn, Rüdiger;  Feneberg, Martin 

Band gap of corundumlike α-Ga 2O 3 determined by absorption and ellipsometry determined by absorption and ellipsometry
In: Physical review materials - College Park, MD: APS, Vol. 1.2017, 2, Art. 024604

Wunderer, Thomas;  Yang, Zhihong;  Feneberg, Martin;  Batres, Max;  Teepe, Mark;  Johnson, Noble 

Structural and optical characterization of AlGaN multiple quantum wells grown on semipolar (20-21) bulk AlN substrate
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 11.2017, 11, Art. 111101

2016

Begutachteter Zeitschriftenartikel

Tabataba-Vakili, Farsane;  Wunderer, Thomas;  Kneissl, Michael;  Yang, Zhihong;  Teepe, Mark;  Batres, Max;  Feneberg, Martin;  Vancil, Bernard;  Johnson, Noble M. 

Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 109.2016, 18, Art. 181105

Feneberg, Martin;  Nixdorf, Jakob;  Lidig, Christian;  Goldhahn, Rüdiger;  Galazka, Zbigniew;  Bierwagen, Oliver;  Speck, James S. 

Erratum: Many-electron effects on the dielectric function of cubic In 2O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
In: Physical review. - Woodbury, NY : Inst; Vol. 93.2016, 23, Art. 239905

Neumann, M. D.;  Esser, N.;  Chauveau, J.-M.;  Goldhahn, Rüdiger;  Feneberg, Martin 

Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 108.2016, 22, Art. 221105, insgesamt 6 S.

Feneberg, Martin;  Nixdorf, Jakob;  Lidig, Christian;  Goldhahn, Rüdiger;  Galazka, Zbigniew;  Bierwagen, Oliver;  Speck, James S. 

Many-electron effects on the dielectric function of cubic In 2 O 3 - effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
In: Physical review. - Woodbury, NY : Inst, Bd. 93.2016, 4

Demchenko, D. O.;  Izyumskaya, N.;  Feneberg, Martin;  Avrutin, V.;  Özgür, Ü.;  Goldhahn, Rüdiger;  Morkoç, H. 

Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3 - theory and experiment
In: Physical review - Woodbury, NY: Inst, Bd. 94.2016, 7

Xie, Yong;  Madel, Manfred;  Feneberg, Martin;  Neuschl, Benjamin;  Jie, Wanqi;  Hao, Yue;  Ma, Xiaohua;  Thonke, Klaus 

Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods
In: Materials Research Express : MRX. - Bristol : IOP Publ; Vol. 3.2016, 4, Art. 045011, insgesamt 7 S.

Minj, A.;  Romero, M. F.;  Wang, Y.;  Tuna, Ö.;  Feneberg, Martin;  Goldhahn, Rüdiger;  Schmerber, G.;  Ruterana, P.;  Giesen, C.;  Heuken, M. 

Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 109.2016, 22, Art. 221106

Freytag, Stefan;  Feneberg, Martin;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Callsen, Gordon;  Hoffmann, Axel;  Bokov, Pavel;  Goldhahn, Rüdiger 

Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 120.2016, 1, Art. 015703

2015

Begutachteter Zeitschriftenartikel

Feneberg, Martin;  Winkler, Michael;  Klamser, Juliane;  Stellmach, Joachim;  Frentrup, Martin;  Ploch, Simon;  Mehnke, Frank;  Wernicke, Tim;  Kneissl, Michael;  Goldhahn, Rüdiger 

Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, 18, Art. 182102, insgesamt 5 S.

Gridneva, E.;  Richter, E.;  Feneberg, Martin;  Weyers, M.;  Goldhahn, Rüdiger;  Tränkle, G. 

Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 252.2015, 5, S. 1180-1188

Schäfer, M.;  Günther, M.;  Länger, C.;  Müßener, J.;  Feneberg, Martin;  Uredat, P.;  Elm, M. T.;  Hille, P.;  Schörmann, J.;  Teubert, J.;  Henning, T.;  Klar, P. J.;  Eickhoff, M. 

Electrical transport properties of Ge-doped GaN nanowires
In: Nanotechnology - Bristol: IOP Publ, Vol. 26.2015, 13, Art. 135704, insgesamt 9 S.

Bokov, P. Yu.;  Brazzini, T.;  Romero, M. F.;  Calle, F.;  Feneberg, Martin;  Goldhahn, Rüdiger 

Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
In: Semiconductor science and technology: devoted exclusively to semiconductor research and applications - Bristol: IOP Publ, Vol. 30.2015, 8, Art. 085014, insgesamt 6 S.

Feneberg, Martin;  Son, Nguyen Tien;  Kakanakova-Georgieva, Anelia 

Exciton luminescence in AlN triggered by hydrogen and thermal annealing
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 106.2015, Art. 242101, insgesamt 5 S.

Tischer, Ingo;  Hocker, Matthias;  Neuschl, Benjamin;  Madel, Manfred;  Feneberg, Martin;  Schirra, Martin;  Frey, Manuel;  Knab, Manuel;  Maier, Pascal;  Wunderer, Thomas;  Leute, Robert A. R.;  Wang, Junjun;  Scholz, Ferdinand;  Biskupek, Johannes;  Bernhard, Jörg;  Kaiser, Ute;  Simon, Ulrich;  Dieterle, Levin;  Groiss, Heiko;  Müller, Erich;  Gerthsen, Dagmar;  Thonke, Klaus 

Optical properties of defects in nitride semiconductors
In: Journal of materials research: JMR - Warrendale, Pa: MRS, insges. 14 S., 2015

Reich, Christoph;  Guttmann, Martin;  Feneberg, Martin;  Wernicke, Tim;  Mehnke, Frank;  Kuhn, Christian;  Rass, Jens;  Lapeyrade, Mickael;  Einfeldt, Sven;  Knauer, Arne;  Kueller, Viola;  Weyers, Markus;  Goldhahn, Rüdiger;  Kneissl, Michael 

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
In: Applied physics letters - Melville, NY: American Inst. of Physics, Vol. 107.2015, 14, Art. 142101, insgesamt 6 S.

Wecker, T.;  Hörich, Florian;  Feneberg, Martin;  Goldhahn, Rüdiger;  Reuter, D.;  As, D. J. 

Structural and optical properties of MBE-grown asymmetric cubic GaN/Al x Ga 1- x N double quantum wells
In: Physica status solidi / B - Weinheim: Wiley-VCH, Bd. 252.2015, 5, S. 873-878

Neuschl, Benjamin;  Gödecke, Laura;  Thonke, Klaus;  Lipski, Frank;  Klein, Martin;  Scholz, Ferdinand;  Feneberg, Martin 

Zeeman spectroscopy of the internal transition 4 T 1 to 6 A 1 of Fe 3+ ions in wurtzite GaN
In: Journal of applied physics: AIP\'s archival journal for significant new results in applied physics - Melville, NY: American Inst. of Physics, Vol. 118.2015, 21, Art. 215705, insgesamt 11 S.

Buchbeitrag

Goldhahn, Rüdiger;  Lange, Karsten;  Feneberg, Martin 

Optical properties and band structure of highly doped gallium nitride
In: Proceedings of SPIE - Bellingham, Wash: SPIE, Vol. 9363.2015, Art. 93630G

2014

Begutachteter Zeitschriftenartikel

Feneberg, Martin;  Lidig, Christian;  Lange, Karsten;  White, Mark E.;  Tsai, Min Y.;  Speck, James S.;  Bierwagen, Oliver;  Goldhahn, Rüdiger 

Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, Bd. 211.2014, 1, S. 82-86

Feneberg, Martin;  Osterburg, Sarah;  Lange, Karsten;  Lidig, Christian;  Garke, Bernd;  Goldhahn, Rüdiger;  Richter, Eberhard;  Netzel, Carsten;  Neumann, Maciej D.;  Esser, Norbert;  Fritze, Stephanie;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois 

Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 90.2014, 7, Art. 075203, insgesamt 10 S.

Neuschl, B.;  Helbing, J.;  Knab, M.;  Lauer, H.;  Madel, M.;  Thonke, K.;  Meisch, T.;  Forghani, K.;  Scholz, F.;  Feneberg, Martin 

Composition dependent valence band order in c-oriented wurtzite AlGaN layers
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 116.2014, 11, Art. 113506, insgesamt 9 S.

Thonke, K.;  Tischer, I.;  Hocker, M.;  Schirra, M.;  Fujan, K.;  Wiedenmann, M.;  Schneider, R.;  Frey, M.;  Feneberg, Martin 

Nanoscale characterisation of semiconductors by cathodoluminescence
In: IOP conference series. - London [u.a.] : Institute of PhysicsIOP conference series / Materials science and engineering; Vol. 55.2014, Art. 012018, insgesamt 21 S.

Feneberg, Martin;  Osterburg, Sarah;  Romero, María Fátima;  Garke, Bernd;  Goldhahn, Rüdiger;  Neumann, Maciej D.;  Esser, Norbert;  Yan, Jianchang;  Zeng, Jianping;  Wang, Junxi;  Li, Jinmin 

Optical properties of magnesium doped Al x Ga1 x N (0.61 ≤ x ≤ 0.73)
In: Journal of applied physics. - Melville, NY : American Inst. of Physics; Vol. 114.2014, Art. 143103, insgesamt 8 S.

Feneberg, Martin;  Lidig, Christian;  Lange, Karsten;  Goldhahn, Rüdiger;  Neumann, Maciej D.;  Esser, Norbert;  Bierwagen, Oliver;  White, Mark E.;  Tsai, Min Y.;  Speck, James S. 

Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 104.2014, Art. 231106, insgesamt 5 S.

Netzel, Carsten;  Stellmach, Joachim;  Feneberg, Martin;  Frentrup, Martin;  Winkler, Michael;  Mehnke, Frank;  Wernicke, Tim;  Goldhahn, Rüdiger;  Kneissl, Michael;  Weyers, Markus 

Polarization of photoluminescence emission from semi-polar (1122) AlGaN layers
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 104.2014, 5, Art. 051906

Feneberg, Martin;  Romero, María Fátima;  Neuschl, Benjamin;  Thonke, Klaus;  Röppischer, Marcus;  Cobet, Christoph;  Esser, Norbert;  Bickermann, Matthias;  Goldhahn, Rüdiger 

Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
In: Thin solid films: international journal on the science and technology of condensed matter films - Amsterdam [u.a.]: Elsevier, Vol. 571.2014, part 3, S. 502-595

2013

Begutachteter Zeitschriftenartikel

Feneberg, Martin;  Romero, María Fátima;  Röppischer, Marcus;  Cobet, Christoph;  Esser, Norbert;  Neuschl, Benjamin;  Thonke, Klaus;  Bickermann, Matthias;  Goldhahn, Rüdiger 

Anisotropic absorption and emission of bulk (1-100) AlN
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 87.2012, 23, Art. 235209, insgesamt 9 S., 2013

Feneberg, Martin;  Lange, Karsten;  Lidig, Christian;  Wieneke, Matthias;  Witte, Hartmut;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Goldhahn, Rüdiger 

Anisotropy of effective electron masses in highly doped nonpolar GaN
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 23, Art. 232104, insgesamt 5 S.

Neuschl, B.;  Thonke, K.;  Feneberg, Martin;  Goldhahn, Rüdiger;  Wunderer, T.;  Yang, Z.;  Johnson, N. M.;  Xie, J.;  Mita, S.;  Rice, A.;  Collazo, R.;  Sitar, Z. 

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 12, Art. 122105, insgesamt 5 S.

Reich, Christoph;  Feneberg, Martin;  Kueller, Viola;  Knauer, Arne;  Wernicke, Tim;  Schlegel, Jessica;  Frentrup, Martin;  Goldhahn, Rüdiger;  Weyers, Markus;  Kneissl, Michael 

Excitonic recombination in epitaxial lateral overgrown AlN on sapphire
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, 21, Art. 212108, insgesamt 5 S.

Wieneke, Matthias;  Witte, Hartmut;  Lange, Karsten;  Feneberg, Martin;  Dadgar, Armin;  Bläsing, Jürgen;  Goldhahn, Rüdiger;  Krost, Alois 

Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 10 20 cm -3
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 103.2013, Art. 012103, insgesamt 4 S.

Brazzini, Tommaso;  Pandrey, Saurabh;  Romero, María Fátima;  Bokov, Pavel Yu.;  Feneberg, Martin;  Tabares, Gema;  Cavallini, Anna;  Goldhahn, Rüdiger;  Calle, Fernando 

Impact of AlN Spacer on metalsemiconductormetal PtInAlGaN/GaN heterostructures for ultraviolet detection
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08jk04, insgesamt 4 S.

Feneberg, Martin;  Romero, María Fátima;  Neuschl, Benjamin;  Thonke, Klaus;  Röppischer, Marcus;  Cobet, Christoph;  Esser, Norbert;  Bickermann, Matthias;  Goldhahn, Rüdiger 

Negative spin-exchange splitting in the exciton fine structure of AlN
In: Applied physics letters. - Melville, NY : American Inst. of Physics; Vol. 102.2013, 5, Art. 052112, insgesamt 4 S.

Scholz, Ferdinand;  Forghani, Kamran;  Klein, Martin;  Klein, Oliver;  Kaiser, Ute;  Neuschl, Benjamin;  Tischer, Ingo;  Feneberg, Martin;  Thonke, Klaus;  Lazarev, Sergey;  Bauer, Sondes;  Baumbach, Tilo 

Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08JJ07, insgesamt 4 S.

Romero, María Fátima;  Feneberg, Martin;  Moser, Pascal;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Sakalauskas, Egidijus;  Calle, Fernando;  Goldhahn, Rüdiger 

Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
In: Japanese journal of applied physics. - Tokyo : Inst. of Pure and Applied Physics; Vol. 52.2013, Art. 08jk02, insgesamt 4 S.

Landmann, M.;  Rauls, E.;  Schmidt, W. G.;  Röppischer, Marcus;  Cobet, Christoph;  Esser, Norbert;  Schupp, Thorsten;  As, Donat J.;  Feneberg, Martin;  Goldhahn, Rüdiger 

Transition energies and direct-indirect band gap crossing in zinc-blende Al_{x}Ga_{1 x}N
In: Physical review. - College Park, Md : APSPhysical review / B; Vol. 87.2013, 19, Art. 195210, insgesamt 21 S.

Habilitation

Feneberg, Martin;  Goldhahn, Rüdiger [Gutachter] 

Hochauflösende Emissions- und Absorptionsspektroskopie an Halbleitern mit großer Bandlücke
In: Magdeburg, Univ., Fak. für Naturwiss., Habil.-Schrift, 2013; II, 49 S.: graph. Darst.

2012

Begutachteter Zeitschriftenartikel

Xie, Yong;  Jie, Wan-Qi;  Wang, Tao;  Wiedenmann, Michael;  Neuschl, Benjamin;  Madel, Manfred;  Wang, Ya-Bin;  Feneberg, Martin;  Thonke, Klaus 

Growth-induced stacking faults of ZnO nanorods probed by spatial resolved cathodoluminescence
In: Chinese physics letters. - Bristol : IOP Publ, Bd. 29.2012, 7, insges. 5 S.

Xie, Yong;  Madel, Manfred;  Neuschl, Benjamin;  Jie, Wanqi;  Röder, Uwe;  Feneberg, Martin;  Thonke, Klaus 

Silicon-on-insulator based ZnO nanowire photodetector
In: Journal of vacuum science & technology. - New York, NY : InstJournal of vacuum science & technology / B, Bd. 30.2012, 6, insges. 5 S.

Originalartikel in begutachteter internationaler Zeitschrift

Xie, Yong;  Madel, Manfred;  Zoberbier, Thilo;  Reiser, Anton;  Jie, Wanqi;  Neuschl, Benjamin;  Biskupek, Johannes;  Kaiser, Ute;  Feneberg, Martin;  Thonke, Klaus 

Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 18, insges. 4 S.

Bickermann, Matthias;  Filip, Octavian;  Epelbaum, Boris M.;  Heimann, Paul;  Feneberg, Martin;  Neuschl, Benjamin;  Thonke, Klaus;  Wedler, Elke;  Winnacker, Albrecht 

Growth of AlN bulk crystals on SiC seeds - chemical analysis and crystal properties
In: Journal of crystal growth. - Amsterdam : North-Holland Publ. Co, Bd. 339.2012, 1, S. 13-21

Romero, Maria Fatima;  Feneberg, Martin;  Moser, Pascal;  Berger, Christoph;  Bläsing, Jürgen;  Dadgar, Armin;  Krost, Alois;  Sakalauskas, E.;  Goldhahn, Rüdiger 

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
In: Applied physics letters. - Melville, NY : AIP, Bd. 100.2012, 21, insges. 4 S.

Neuschl, Benjamin;  Thonke, Klaus;  Feneberg, Martin;  Mita, Seiji;  Xie, Jinqiao;  Dalmau, Rafael;  Collazo, Ramón;  Sitar, Zlatko 

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, Bd. 249.2012, 3, S. 511-515

Feneberg, Martin;  Röppischer, Marcus;  Cobet, Christoph;  Esser, Norbert;  Schörmann, Jörg;  Schupp, Thorsten;  As, Donat J.;  Hörich, Florian;  Bläsing, Jürgen;  Krost, Alois;  Goldhahn, Rüdiger 

Optical properties of cubic GaN from 1 to 20 eV
In: Physical review. - Ridge, NY : APSPhysical review / B, Bd. 85.2012, 15, insges. 7 S.

Xie, Yong;  Jie, Wanqi;  Reiser, Anton;  Feneberg, Martin;  Tischer, Ingo;  Wiedenmann, Michael;  Madel, Manfred;  Frey, Reinhard;  Roeder, Uwe;  Thonke, Klaus 

Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers
In: Materials letters. - New York, NY [u.a.] : Elsevier, Bd. 83.2012, S. 31-34

2011

Buchbeitrag

Thonke, Klaus;  Feneberg, Martin 

Photoluminescence of ZnO - basics and applications
In: Handbook of luminescent semiconductor materials - Boca Raton, Fla: CRC Press/Taylor & Francis, S. 87-124, 2011

Originalartikel in begutachteter internationaler Zeitschrift

Madel, Manfred;  Xie, Yong;  Tischer, Ingo;  Neuschl, Benjamin;  Feneberg, Martin;  Frey, Reinhard;  Thonke, Klaus 

Catalytic growth of hexagonally aligned ZnO nanorods
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 8, S. 1915-1918

Dalmau, R.;  Moody, B.;  Schlesser, R.;  Mita, S.;  Xie, J.;  Feneberg, Martin;  Neuschl, B.;  Thonke, K.;  Collazo, R.;  Rice, A.;  Tweedie, J.;  Sitar, Z. 

Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal Substrates
In: Journal of the Electrochemical Society - Pennington, NJ: Electrochemical Society, 158.2011, 5, S. H530-H535

Tischer, Ingo;  Feneberg, Martin;  Schirra, Martin;  Yacoub, Hady;  Sauer, Rolf;  Thonke, Klaus;  Wunderer, Thomas;  Scholz, Ferdinand;  Dieterle, Levin;  Müller, Erich;  Gerthsen, Dagmar 

I 2 basal plane stacking fault in GaN - origin of the 3.32 eV luminescence band
In: Physical review / B - Ridge, NY: APS, Bd. 83.2011, 3, S. 035314-1-035314-6

Forghani, Kamran;  Gharavipour, Mohammadreza;  Klein, Martin;  Scholz, Ferdinand;  Klein, Oliver;  Kaiser, Ute;  Feneberg, Martin;  Neuschl, Benjamin;  Thonke, Klaus 

In-situ deposited SiNx nanomask for crystal quality improvement in AlGaN
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 7/8, S. 2063-2065

Rossbach, Georg;  Feneberg, Martin;  Röppischer, Marcus;  Werner, Christoph;  Esser, Norbert;  Cobet, Christoph;  Meisch, Tobias;  Thonke, Klaus;  Dadgar, Armin;  Bläsing, Jürgen;  Krost, Alois;  Goldhahn, Rüdiger 

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge
In: Physical review / B - Ridge, NY: APS, 83.2011, 19, Art. 195202, insgesamt 7 S.

Kunert, G.;  Freund, W.;  Aschenbrenner, T.;  Kruse, C.;  Figge, S.;  Schowalter, M.;  Rosenauer, A.;  Kalden, J.;  Sebald, K.;  Gutowski, J.;  Feneberg, Martin;  Tischer, I.;  Fujan, K.;  Thonke, K.;  Hommel, D. 

Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
In: Nanotechnology - Bristol: IOP Publishing Ltd., 22.2011, 26, Art. 265202, insgesamt 6 S.

Schupp, Thorsten;  Meisch, Tobias;  Neuschl, Benjamin;  Feneberg, Martin;  Thonke, Klaus;  Lischka, Klaus;  As, Donat Josef 

Molecular beam epitaxy based growth of cubic GaN quantum dots
In: Physica status solidi / C: pss - Berlin: Wiley-VCH, Bd. 8.2011, 5, S. 1495-1498

Neumann, M. D.;  Cobet, C.;  Esser, N.;  Laumer, B.;  Wassner, T. A.;  Eickhoff, M.;  Feneberg, Martin;  Goldhahn, Rüdiger 

Optical properties of MgZnO alloys - excitons and exciton-phonon complexes
In: Journal of applied physics - Melville, NY: AIP, 110.2011, 1, Art. 013520, insgesamt 8 S.

Feneberg, Martin;  Neuschl, Benjamin;  Thonke, Klaus;  Collazo, Ramón;  Rice, Anthony;  Sitar, Zlatko;  Dalmau, Rafael;  Xie, Jinqiao;  Mita, Seiji;  Goldhahn, Rüdiger 

Sharp bound and free exciton lines from homoepitaxial AlN
In: Physica status solidi / A: pss - Berlin: Wiley-VCH, Bd. 208.2011, 7, S. 1520-1522

Tischer, Ingo;  Feneberg, Martin;  Schirra, Martin;  Yacoub, Hady;  Sauer, Rolf;  Thonke1, Klaus;  Wunderer, Thomas;  Scholz, Ferdinand;  Dieterle, Levin;  Müller, Erich;  Gerthsen, Dagmar 

Stacking fault-related luminescence features in semi-polar GaN
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 611-615

Feneberg, Martin;  Röppischer, Marcus;  Esser, Norbert;  Cobet, Christoph;  Neuschl, Benjamin;  Meisch, Tobias;  Thonke, Klaus;  Goldhahn, Rüdiger 

Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al 0.94Ga 0.06N
In: Applied physics letters - Melville, NY: AIP, 99.2011, 2, Art. 021903, insgesamt 3 S.

Wunderer, T.;  Feneberg, Martin;  Lipski, F.;  Wang, J.;  Leute, R. A. R.;  Schwaiger, S.;  Thonke, K.;  Chuvilin, A.;  Kaiser, U.;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Beirne, G. J.;  Jetter, M.;  Michler, P.;  Schade, L.;  Vierheilig, C.;  Schwarz, U. T.;  Dräger, A. D.;  Hangleiter, A.;  Scholz, F. 

Three-dimensional GaN for semipolar light emitters
In: Physica status solidi / B: pss - Berlin: Wiley-VCH, Bd. 248.2011, 3, S. 549-560

Schupp, T.;  Meisch, T.;  Neuschl, B.;  Feneberg, Martin;  Thonke, K.;  Lischka, K.;  As, D. J. 

Zinc-blende GaN quantum dots grown by vaporliquidsolid condensation
In: Journal of crystal growth - Amsterdam [u.a.]: Elsevier, Bd. 323.2011, 1, S. 286-289

2010

Buchbeitrag

Gao, Z.;  Carabelli, V.;  Carbone, E.;  Colombo, E.;  Dipalo, M.;  Manfredotti, C.;  Pasquarelli, A.;  Feneberg, Martin;  Thonke, K.;  Vittone, E.;  Kohn, E. 

Transparent microelectrode array in diamond technology
In: 2009 IEEE International Conference on Nano/Molecular Medicine and Engineering . - IEEE, ISBN 978-1-424-45528-7, S. 282-285

Originalartikel in begutachteter internationaler Zeitschrift

Neuschl, B.;  Fujan, K. J.;  Feneberg, Martin;  Tischer, I.;  Thonke, K.;  Forghani, K.;  Klein, M.;  Scholz, F. 

Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiN x interlayers
In: Applied physics letters . - Melville, NY : AIP, Bd. 97.2010, 19, S. 192108-1-192108-3

Fujan, Kim J.;  Feneberg, Martin;  Neuschl, Benjamin;  Meisch, T.;  Tischer, Ingo;  Thonke, Klaus;  Schwaiger, Stephan;  Izadi, Ida;  Scholz, Ferdinand;  Lechner, Lorenz;  Biskupek, Johannes;  Kaiser, Ute 

Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
In: Applied physics letters . - Melville, NY : AIP, Bd. 97.2010, 10, insges. 3 S.

Bickermann, Matthias;  Epelbaum, Boris M.;  Filip, Octavian;  Heimann, Paul;  Feneberg, Martin;  Nagata, Shunro;  Winnacker, Albrecht 

Deep-UV transparent bulk single-crystalline AlN substrates
In: Physica status solidi . - Berlin : Wiley-VCH, Abstract unter URL: http://dx.doi.org/10.1002/pssc.200983422, 2010

Schupp, Thorsten;  Meisch, Tobias;  Neuschl, Benjamin;  Feneberg, Martin;  Thonke, Klaus;  Lischka, Klaus;  As, Donat J. 

Droplet epitaxy of zinc-blende GaN quantum dots
In: Journal of crystal growth . - Amsterdam : North-Holland Publ. Co., Bd. 312.2010, 21, S. 3235-3237

Scholz, Ferdinand;  Wunderer, Thomas;  Feneberg, Martin;  Thonke, Klaus;  Chuvilin, Andrei;  Kaiser, Ute;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen 

GaInN-based LED structures on selectively grown semi-polar crystal facets
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / A, 2010

Forghani, K.;  Klein, M.;  Lipski, F.;  Schwaiger, S.;  Hertkorn, J.;  Leute, R. A. R.;  Scholz, F.;  Feneberg, Martin;  Neuschl, B.;  Thonke, K.;  Klein, O.;  Kaiser, U.;  Gutt, R.;  Passow, T. 

High quality AlGaN epilayers grown on sapphire using SiN x interlayers
In: Journal of crystal growth . - Amsterdam [u.a.] : Elsevier

Feneberg, Martin;  Leute, Robert A. R.;  Neuschl, Benjamin;  Thonke, Klaus;  Bickermann, Matthias 

High-excitation and high-resolution photoluminescence spectra of bulk AlN
In: Physical review . - Ridge, NY : APS, Bd. 82.2010, 7, insges. 8 S.

Romanyuk, Andriy;  Melnik, Viktor;  Olikh, Yaroslav;  Biskupek, Johannes;  Kaiser, Ute;  Feneberg, Martin;  Thonke, Klaus;  Oelhafen, Peter 

Light emission from nanocrystalline silicon clusters embedded in silicon dioxide - role of the suboxide states
In: Journal of luminescence . - Amsterdam : North-Holland Publ. Co., Bd. 130.2010, 1, S. 87-91

Feneberg, Martin;  Thonke, Klaus;  Wunderer, Thomas;  Lipski, Frank;  Scholz, Ferdinand 

Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
In: Journal of applied physics . - Melville, NY : AIP, Bd. 107.2010, 10, insges. 6 S.

Jetter, M.;  Wächter, C.;  Meyer, A.;  Feneberg, Martin;  Thonke, K.;  Michler, P. 

Quaternary Al xIn yGa 1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission
In: Journal of crystal growth . - Amsterdam [u.a.] : Elsevier, insges. 4 S.

Thonke, Klaus;  Schirra, Martin;  Schneider, Raoul;  Reiser, Anton;  Prinz, Günther M.;  Feneberg, Martin;  Sauer, Rolf;  Biskupek, Johannes;  Kaiser, Ute 

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
In: Physica status solidi . - Weinheim : Wiley-VCH, Bd. 247.2010, 6, S. 1464-1468

Wunderer, Thomas;  Feneberg, Martin;  Lipski, Frank;  Wang, Junjun;  Leute, Robert;  Schwaiger, Stephan;  Thonke, Klaus;  Chuvilin, Andrei;  Kaiser, Ute;  Metzner, Sebastian;  Bertram, Frank;  Christen, Jürgen;  Beirne, Gareth;  Jetter, Michael;  Michler, Peter;  Schade, Lukas;  Vierheilig, Clemens;  Schwarz, Ulrich;  Dräger, Alexander;  Hangleiter, Andreas;  Scholz, Ferdinand 

Three-dimensional GaN for semipolar light emitters
In: Physica status solidi. - Weinheim : Wiley-VCHPhysica status solidi / B, insges. 12 S., 2010

Originalartikel in begutachteter zeitschriftenartiger Reihe

Dalmau, Rafael;  Moody, Baxter;  Schlesser, Raoul;  Mita, Seiji;  Xie, Jinqiao;  Feneberg, Martin;  Neuschl, Benjamin;  Thonke, Klaus;  Collazo, Ramón;  Rice, Anthony;  Tweedie, James;  Sitar, Zlatko 

Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
In: State-of-the-art program on compound semiconductors 52 (SOTAPOCS 52) . - Pennington, NJ : Electrochemical Soc., ISBN 978-1-607-68182-3, S. 43-54; ECS transactions; 33,13

Schupp, T.;  Meisch, T.;  Neuschl, B.;  Feneberg, Martin;  Thonke, K.;  Lischka, K.;  As, D. 

Growth of cubic GaN quantum dots
In: 2010 wide bandgap cubic semiconductors: from growth to devices. - Melville, NY : American Inst. of Physics, S. 165-168 - (AIP conference proceedings; 1292)

2006

Anderes Material

Neubert, B.;  Habel, F.;  Brückner, P.;  Scholz, F.;  Schirra, M.;  Feneberg, M.;  Thonke, K.;  Riemann, Till;  Christen, Jürgen;  Beer, M.;  Zweck, J.;  Moutchnik, G.;  Jetter, M. 

Investigations on local Ga and In incorporation of GaInN quantum wells on facets of selectively grown GaN stripes
In: Physica status solidi . - Berlin : Wiley-VCH, Bd. 3.2006, 6, S. 1587-1590

Projekte
Kooperationen
  • Prof. Dr. M. Bickermann, Leibniz Institut für Kristallzüchtung (IKZ), Berlin
  • Prof. Dr. J.S. Speck, University of California, Santa Barbara
  • Prof. Dr. A. Dadgar, Abteilung Halbleiterepitaxie, OvGU Magdeburg
  • Prof. Dr. M. Kneissl, TU Berlin und FBH Berlin
  • Dr. O. Bierwagen, Paul Drude Institut (PDI), Berlin
  • AG Kuball, University of Bristol, UK
  • Prof.Dr. N.T. Son und Dr. A. Kakanakova-Georgieva, University Linköping, Schweden
  • Prof. Dr. Z. Sitar und Prof. Dr. R. Collazo, North Carolina State University, USA
  • Dr. Manfred Ramsteiner, PDI, Berlin
Lehre

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