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Liste der Publikationen der Abteilung Materialphysik seit 2010. Die meisten Publikationen sind direkt verlinkt. Wenn Sie Interesse an einer unserer Publikationen haben, sie aber nicht erhalten können, sprechen Sie uns bitte direkt an!

2018

  • M. Feneberg, C. Lidig, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, Z. Galazka, and R. Goldhahn
    Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift
    APL Materials, in press (2018).

  • M. Budde, C. Tschammer, P. Franz, J. Feldl, M. Ramsteiner, R. Goldhahn, M. Feneberg, N. Barsan, A. Oprea, and O. Bierwagen
    Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy
    J. Appl. Phys. 123, 195301 (2018)

  • M. Šilinskas, B. Kalkofen, R. Balasubramanian, A. Batmanov, E. P. Burte, N. Harmgarth, F. Zörner, F. T. Edelmann, B. Garke, and M. Lisker
    Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
    J. Vac. Sci. Technol. A 36, 021510 (2018)

2017

2016

  • A. Minj, M.F. Romero, Y. Wang, Ö. Tuna, M. Feneberg, R. Goldhahn, G. Schmerber, P. Ruterana, C, Giesen, and M. Heuken
    Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
  • P. Streitenberger, D. Zöllner
    Enveloppen-Methode zur Auswertung von Größenverteilungen bei Vergröberungsprozessen
    In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 50, 235-240 (2016)
  • F. Tabataba-Vakili, T. Wunderer, M. Kneissl, Z. Yang, M. Teepe, M. Batres, M. Feneberg, B. Vancil, and N.M. Johnson
    Dominance of radiative recombination from electron-beam-pumped Deep-UV AlGaN multi-quantum-well heterostructures
  • D.O. Demchenko, N. Izyumskaya, M. Feneberg, V. Avrutin, Ü. Özgür, R. Goldhahn, and H. Morkoç
    Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3: Theory and experiment
  • S. Freytag, M. Feneberg, C. Berger, J. Bläsing, A. Dadgar, G. Callsen, F. Nippert, A. Hoffmann, P. Bokov, and R. Goldhahn
    Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
  • M.D. Neumann, N. Esser, J.-M. Chauveau, R. Goldhahn, and M. Feneberg
    Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
  • Y. Xie, M. Madel, M. Feneberg, B. Neuschl, W. Jie, X. Ma, and K. Thonke
    Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods
  • M. Feneberg, J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J.S. Speck
    Many-electron effects on the dielectric function of cubic In2O3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift

2015

  • B. Neuschl, M.L. Gödecke, K. Thonke, F. Lipski, M. Klein, F. Scholz, and M. Feneberg
    Zeeman spectroscopy of the internal transition 4T1 to 6A1 of Fe3+ ions in wurtzite GaN
  • C. Reich, M. Guttmann, M. Feneberg, T. Wernicke, F. Mehnke, C. Kuhn, J. Rass, M. Lapeyrade, S. Einfeldt, A. Knauer, V. Kueller, M. Weyers, and M. Kneissl
    Strongly TE-polarized Emission from Deep UV AlGaN Quantum Well LEDs
  • C. Tessarek, R. Goldhahn, G. Sarau, M. Heilmann, S. Christiansen
    Carrier-induced refractive index change observed by a whispering gallery mode shift in GaN microrods
  • P.Yu. Bokov, T. Brazzini, M.F. Romero, F. Calle, M. Feneberg, and R. Goldhahn
    Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
  • E. Gridneva, E. Richter, M. Feneberg, M. Weyers, R. Goldhahn, and G. Tränkle
    Effect of carrier gas in hydride vapor phase epitaxy on the optical and structural properties of GaN
  • T. Wecker, F. Hörich, M. Feneberg, R. Goldhahn, D. Reuter, and D.J. As
    Structural and optical properties of MBE grown asymmetric cubic GaN/AlxGa1-xN double quantum wells
  • M. Feneberg, M. Winkler, J. Klamser, J. Stellmach, M. Frentrup, S. Ploch, F. Mehnke, T. Wernicke, M. Kneissl, and R. Goldhahn
    Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
  • B. Kalkofen, A.A. Amusan, M.S.K. Bukhari, B. Garke, M. Lisker, H. Gargouri, and E.P. Burte
    Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
  • M. Schäfer, M. Günther, C. Länger, J. Müßener, M. Feneberg, P. Uredat, M.T. Elm, P. Hille, J. Schörmann, J. Teubert, T. Henning, P.J. Klar, and M. Eickhoff
    Electrical transport properties of Ge-doped GaN nanowires

2014

  • M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn
    Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
  • P. Streitenberger
    Sadi Carnot in Magdeburg und die Begründung der Thermodynamik
    Monumenta Guerickiana (189), Heft 23/24, 147–160, Magdeburg (2014)
  • H. Ravash, E. Specht, J. Vleugels, N. Moelans
    3D phase-field simulation and characterization of microstructure evolution during Liquid Phase Sintering
  • M. Feneberg, S. Osterburg, M.F. Romero, B. Garke, R. Goldhahn, M.D. Neumann, N. Esser, J. Yan, J. Zeng, J. Wang, and J. Li
    Optical properties of magnesium doped AlGaN (0.61 < x < 0.733)
  • B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz, and M. Feneberg
    Composition dependent valence band order in c-oriented wurtzite AlGaN layers
  • M. Feneberg, S. Osterburg, K. Lange, C. Lidig, B. Garke, R. Goldhahn, E. Richter, C. Netzel, M.D. Neumann, N. Esser, S. Fritze, H. Witte, J. Bläsing, A. Dadgar, and A. Krost
    Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
  • P. Streitenberger, D. Zöllner
    Triple junction controlled grain growth in two-dimensional polycrystals and thin films: Self-similar growth laws and grain size distributions
  • M. Feneberg, C. Lidig, K. Lange, R. Goldhahn, M.D. Neumann, N. Esser, O. Bierwagen, M.E. White, M.Y. Tsai, and J.S. Speck
    Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
  • C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, and M. Weyers
    Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers
  • M. Feneberg, C. Lidig, K. Lange, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, R. Goldhahn
    Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry

2013

  • C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M. Kneissl
    Excitonic recombination in epitaxial overgrown AlN on sapphire
  • B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N.M. Johnson, J. Xie, S. Mita, A. Rice, R. Collazo, Z. Sitar
    Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
  • D. Zöllner, J. Dake and C.E. Krill
    Simulation der Korngrenzenmigration in polykristallinem Graphen
    In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 247-252 (2013)
  • S. Schäfer and D. Zöllner
    Triple-Junction-Winkel in diskretisierten digitalen Kornmikrostrukturen
    In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 309-314 (2013)
  • M. Wieneke, H. Witte, K. Lange, M. Feneberg, A. Dadgar, J. Bläsing, R. Goldhahn, and A. Krost
    Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm-3
  • M. Feneberg, M.F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, and R. Goldhahn
    Anisotropic absorption and emission of bulk (1-100) AlN
  • F. Scholz, K. Forghani, M. Klein, O. Klein, U. Kaiser, B. Neuschl, I. Tischer, M. Feneberg, K. Thonke, S. Lazarev, S. Bauer, and T. Baumbach
    Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
  • M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, and R. Goldhahn
    Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1-xN
  • M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, F. Calle, R. Goldhahn
    Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
  • T. Brazzini, S. Pandey, M.F. Romero, P.Yu. Bokov, M. Feneberg, G. Tabares, A. Cavallini, R. Goldhahn, F. Calle
    Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection
  • M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn
    Negative spin-exchange splitting in the exciton fine structure of AlN
  • M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Petzoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Félix, J.M. Mánuel, F.M. Morales, D. Carvalho, T. Ben, R. Garcia, and G. Koblmüller
    N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

2012

  • Y. Xie, M. Madel, Y. Li, W. Jie, B. Neuschl, M. Feneberg, and K. Thonke
    Polarity-controlled ultraviolet/visible light ZnO nanorods/p-Si photodetector
  • Y. Xie, W.-Q. Jie, T. Wang, M. Wiedenmann, B. Neuschl, M. Madel, Y.-B. Wang, M. Feneberg, and K. Thonke
    Growth-induced Stacking Faults of ZnO Nanorods Probed by Spatial Resolved Cathodoluminescence
  • Y. Xie, W. Jie, A. Reiser, M. Feneberg, I. Tischer, M. Wiedenmann, M. Madel, R. Frey, U. Röder, and K. Thonke
    Suppression of gallium inhomogeneity in ZnO nanostructures on GaN using seed layers
  • M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, R. Goldhahn
    Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content
  • B. Reuters, A. Wille, B. Holländer, E. Sakalauskas, N. Ketteniss, C. Mauder, R. Goldhahn, M. Heuken, H. Kalisch, and A. Vescan
    Growth Studies on Quaternary AlInGaN Layers for HEMT Application
  • Y. Xie, M. Madel, T. Zoberbier, A. Reiser, W. Jie, B. Neuschl, J. Biskupek, U. Kaiser, M. Feneberg, and K. Thonke
    Enforced c-axis growth of ZnO epitaxial chemical vapor deposition films on a-plane sapphire
  • M. Feneberg, M. Röppischer, C. Cobet, N. Esser, J. Schörmann, T. Schupp, D.J. As, F. Hörich, J. Bläsing, A. Krost, R. Goldhahn
    Optical properties of cubic GaN from 1 to 20 eV
  • M. Bickermann, O. Filip, B.M. Epelbaum, P. Heimann, M. Feneberg, B. Neuschl, K. Thonke, E. Wendler, and A. Winnacker
    Growth of AlN bulk crystals on SiC seeds: Chemical analysis and crystal properties

2011

  • P. Streitenberger, D. Zöllner
    Einfluss von reduzierter Mobilität und Energie von Tripellinien und Quadrupelpunkten auf Kornwachstum
    In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 213-218 (2011)
  • D. Zöllner, P. Streitenberger, I. Fielden
    Einzelkornkinetik von Polykristallinen Materialien
    In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 189-194 (2011)
  • C. Kraft, M. Hädrich, H. Metzner, U. Reislöhner, P. Schley, R. Goldhahn
    Investigation of the Excitonic Luminescence Band of CdTe Solar Cells by Photoluminescence and Photoluminescence Excitation Spectroscopy
  • C. Kraft, A. Brömel, S. Schönherr, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn, W. Wesch, H. Metzner
    Phosphorus Implanted Cadmium Telluride Solar Cells
  • A. Riefer, F. Fuchs, C. Rödl, A. Schleife, F. Bechstedt, R. Goldhahn
    Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs
  • M. Feneberg, M. Röppischer, N. Esser, C. Cobet, B. Neuschl, T. Meisch, K. Thonke, R. Goldhahn
    Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N
  • M.D. Neumann, C. Cobet, N. Esser, B. Laumer, T.A. Wassner, M. Eickhoff, M. Feneberg, R. Goldhahn
    Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes
  • E. Sakalauskas, B. Reuters, L. Rahimzadeh Khoshroo, H. Kalisch, M. Heuken, A. Vescan, M. Röppischer, C. Cobet, G. Gobsch, R. Goldhahn
    Dielectric function and optical properties of quaternary AlInGaN alloys
  • A. Kraus, S. Hammadi, J. Hisek, R. Buß, H. Jönen, H. Bremers, U. Rossow, E. Sakalauskas, R. Goldhahn, A. Hangleiter
    Growth and characterization of InGaN by RF-MBE
  • G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M. Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M. Feneberg, I. Tischer, K. Fujan, K. Thonke, and D. Hommel
    Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
  • R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar
    Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates
  • G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, C. Cobet, N. Esser, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost, and R. Goldhahn
    Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band-edge
  • K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, L. Kirste, H.P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn
    Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
  • I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen
    Stacking fault related luminescence features in semi-polar GaN
  • T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G.J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, D. Draeger, A. Hangleiter, and F. Scholz
    Three-dimensional GaN for semipolar light emitters
  • M. Jetter, C. Wächter, A. Mayer, M. Feneberg, K. Thonke, and P. Michler
    Quaternary AlInGaN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficient light emission
  • K. Forghani, M. Klein, F. Lipski, S. Schwaiger, J. Hertkorn, R.A.R. Leute, F. Scholz, M. Feneberg, B. Neuschl, K. Thonke, O. Klein, U. Kaiser, R. Gutt, and T. Passow
    High quality AlGaN epilayers grown on sapphire using SiN interlayers
  • I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen
    I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
  • Z. Gao, V. Carabelli, E. Carbone, E. Colombo, M. Dipalo, Ch. Mafredotti, A. Pasquarelli, M. Feneberg, K. Thonke, E. Vittone, and E. Kohn
    Transparent microelectrode array in diamond technology

2010

  • C. Kraft, H. Metzner, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn
    Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers
  • B. Neuschl, K.J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, and F. Scholz
    Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers
  • R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar
    Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates
  • T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
    Droplet epitaxy of zinc-blende GaN quantum dots
  • D. Zöllner, P. Streitenberger
    Characterisation of 3D Microstructural Evolution of Individual Grains
    Proc. 31st Risø Int. Symp. on Challenges in materials science and possibilities in 3D and 4D characterization techniques, ed. by N. Hansen, D. J. Jensen, S. F. Nielsen, H. F. Poulsen, B. Ralph, p. 505-513 (2010)
  • K.J. Fujan, M. Feneberg, B. Neuschl, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser
    Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
  • E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R.H. Jansen, J. Bläsing, A. Dadgar, A. Krost and R. Goldhahn
    Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
  • M. Feneberg, R.A.R. Leute, B. Neuschl, K. Thonke, M. Bickermann
    High-excitation and high-resolution photoluminescence spectra of bulk AlN
  • P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, K. Köhler, M. Mikulla, O. Ambacher, L. Harm, M. Lorenzini, T. Rödle, K. Riepe, K. Bellmann, C. Buchheim, R. Goldhahn
    Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
  • F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen
    GaInN-based LED structures on selectively grown semi-polar crystal facets
  • I. Hotovy, J. Pezoldt, M. Kadlecikova, T. Kups, L. Spiess, J. Breza, E. Sakalauskas, R. Goldhahn, V. Rehacek
    Structural characterization of sputtered indium oxide films deposited at room temperature
  • M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, and F. Scholz
    Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
  • K. Thonke, M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, R. Sauer, J. Biskupek, and U. Kaiser
    The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
  • A. Romanyuk, V. Melnik, Y. Olikh, J. Biskupek, U. Kaiser, M. Feneberg, K. Thonke, and P. Oelhafen
    Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states
  • P. Schley, J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, J.S. Speck, R. Goldhahn
    Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates
  • E. Sakalauskas, P. Schley, J. Räthel, T.A. Klar, R. Müller, J. Pezoldt, K. Tonisch, J. Grandal, M.A. Sánchez-García, E. Calleja, A. Vilalta-Clemente, P. Ruterana, R. Goldhahn
    Optical properties of InN grown on Si(111) substrate
  • K. Köhler, S. Müller, R. Aidam, P. Waltereit, W. Pletschen, L. Kirste, H.P. Menner, W. Bronner, A. Leuther, R. Quay, M. Mikulla, O. Ambacher, R. Granzner, F. Schwierz, C. Buchheim, R. Goldhahn
    Influence of the surface potential on electrical properties of AlxGa1-xN/GaN heterostructures with different Al content: Effect of growth method

älter als 2010

(unvollständig)

    • M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, D.J. As
      Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
    • P. Waltereit, S. Müller, K. Bellmann, C. Buchheim, R. Goldhahn, K. Köhler, L. Kirste, M. Baeumler, M. Dammann, W. Bronner, R. Quay, O. Ambacher
      Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
    • M. Röppischer, R. Goldhahn, C. Buchheim, F. Furtmayr, T. Wassner, M. Eickhoff, C. Cobet, N. Esser (Editor's Choice)
      Analysis of polarization-dependent photoreflectance studies for c-plane GaN films grown on a-plane sapphire
    • J. Eberhardt, J. Cieslak, H. Metzner, Th. Hahn, R. Goldhahn, F. Hudert, J. Kräußlich, U. Kaiser, A. Chuvilin, U. Reislöhner, W. Witthuhn
      Epitaxial and polycrystalline CuInS2 layers: Structural metastability and its influence on the photoluminescence
    • C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, C. Werner, N.Esser, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost
      Influence of anisotropic strain on excitonic transitions in a-plane GaN films
    • F. Scholz, S. B. Thapa, M. Fikry, J. Hertkorn, T. Wunderer, F. Lipski, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L. D. Yao, and D. Gerthsen
      Epitaxial growth of coaxial GaInN-GaN hetero-nanotubes
    • D. Wahl, A. Ladenburger, M. Feneberg, W. Schoch, K. Thonke, and R. Sauer
      Semiconductor quantum dots through conversion of micelle-generated metal clusters
    • R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, and M. Kasu
      Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
    • T. Wunderer, F. Lipski, S. Schwaiger, J. Hertkorn, M. Wiedenmann, M. Feneberg, K. Thonke, and F. Scholz
      Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
    • L. D. Yao, D. Weissenberger, M. Dürrschnabel, D. Gerthsen, I. Tischer, M. Wiedenmann, M. Feneberg, A. Reiser, and K. Thonke
      Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing
    • F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, and K. Thonke
      GaN-based Light Emitting Diodes on Selectively Grown Semipolar Crystal Facets
    • M. Schirra, M. Feneberg, G. M. Prinz, A. Reiser, T. Röder, K. Thonke, and R. Sauer
      Beating of Coupled Ultraviolet Light Modes in Zinc Oxide Nanoresonators
    • D. Weissenberger, D. Gerthsen, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, H. Zhou, J. Sartor, J. Fallert, C. Klingshirn, and H. Kalt
      Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods
    • F. Lipski, S.B. Thapa, J. Hertkorn, T. Wunderer, S. Schwaiger, F. Scholz, M. Feneberg, M. Wiedenmann, K. Thonke, H. Hochmuth, M. Lorenz, and M. Grundmann
      Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
    • A. Reiser, V. Raeesi, G. M. Prinz, M. Schirra, M. Feneberg, U. Röder, R. Sauer, and K. Thonke
      Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates
    • K. Thonke, M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, and R. Sauer
      The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures
    • J.S. Rojas-Ramírez, R. Goldhahn, P. Moser, J. Huerta-Ruelas, J. Hernándes-Rosas, M. López-López
      Temperature dependence of the photoluminescence emission from InxGa1-xAs quantum wells on GaAs(311) substrates
    • A. Schleife, C. Rödl, F. Fuchs, J. Furthmüller, F. Bechstedt, P.H. Jefferson, T.D. Veal, C.F. Mc Conville, L.F.J. Piper, A. DeMasi, K.E. Smith, H. Lösch, R. Goldhahn, C. Cobet, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
      Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO
    • K. Tonisch, C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, R. Goldhahn
      Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
    • M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn
      Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
    • P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D. J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt
      Band gap and effective electron mass of cubic InN
    • P. Schley, R. Goldhahn, C. Napierala, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke
      Dielectric function of cubic InN from the mid-infrared to the visible spectral range
    • M. Rakel, C. Cobet, N. Esser, F. Fuchs, F. Bechstedt, R. Goldhahn, W.G. Schmidt, W. Schaff
      GaN and InN conduction-band states studied by ellipsometry
    • C. Buchheim, R. Goldhahn, G. Gobsch, K. Tonisch, V. Cimalla, F.Niebelschütz, O. Ambacher
      Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
    • C.P. Yeh, M. Lisker, V. Vezin, B. Seitzinger, P.K. Baumann, B. Garke, J. Bläsing, A. Krost, E.P. Burte
      Fabrication of ferroelectric PZT thin films by liquid delivery MOCVD using novel Zr and Ti precursors
    • P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D.J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, H. Lu, W.J. Schaff
      Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
    • J. Eberhardt, H. Metzner, K. Schulz, U. Reislöhner, Th. Hahn, J. Cieslak, W. Witthuhn, R. Goldhahn, F. Hudert, J. Kräußlich
      Excitonic luminescence of polycrystalline CuInS2 solar cell material under the influence of strain
    • C. Buchheim, R. Goldhahn, A.T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, M. Eickhoff
      Stark shift of interband transitions in AlN/GaN superlattices
    • P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W.J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, N. Esser
      Dielectric function and Van Hove singularities for In-rich InxGa1-xN alloys: Comparison of N- and metal-face materials
    • J. Eberhardt, K. Schulz, H. Metzner, J. Cieslak, Th. Hahn, U. Reislöhner, M. Gossla, F. Hudert, R. Goldhahn, W. Witthuhn
      Epitaxial and polycrystalline CuInS2 thin films: A comparison of opto-electronic properties
    • R. Goldhahn, A.T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff (Editor's Choice)
      Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction
    • J. Schörmann, D.J. As, K. Lischka, P. Schley, R. Goldhahn, S.F. Li, W. Löffler, M. Hetterich, H. Kalt
      Molecular beam epitaxy of phase pure cubic InN
      Appl. Phys. Lett. 89 (26), 261903 (2006)
    • V. Cimalla, V. Lebedev, F.M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher
      Origin of n-type conductivity in nominally undoped InN
      Materialwissenschaft und Werkstofftechnik 37 (11), 924-928 (2006)
    • V. Cimalla, V. Lebedev, F.M. Morales, R. Goldhahn, O. Ambacher
      Model for the thickness dependence of electron concentration in InN films
      Appl. Phys. Lett. 89, 172109 (2006)
    • V.G. Talalaev, J.W. Tomm, A.S. Sokolov, I.V. Shtrom, B.V. Novikov, A.T. Winzer, R. Goldhahn, G. Gobsch, N.D. Zakharov, P. Werner, U. Gösele, G.E. Cirlin, A.A. Tonkikh, V.M. Ustinov, G.G. Tarasov
      Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field
      J. Appl. Phys. 100 (8), 083704 (2006)
    • A.T. Winzer, G. Gobsch, R. Goldhahn, D. Fuhrmann, A. Hangleiter, A. Dadgar, A. Krost
      Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment
      Phys. Rev. B 74 (12), 125207 (2006)
    • C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, O. Ambacher
      Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy
      Phys. Status Solidi C 3 (6), 2009-2013 (2006)
    • V. Cimalla , M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, W. J. Schaff
      The conductivity of Mg-doped InN
      Phys. Status Solidi C 3 (6), 1721-1724 (2006)
    • P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
      Transition energies and Stokes shift analysis for In-rich InGaN alloys
      Phys. Status Solidi B 243 (7), 1572-1576 (2006)
    • R. Goldhahn, P. Schley, A.T. Winzer, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
      Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN
      J. Cryst. Growth 288 (2), 273-277 (2006)
    • R. Goldhahn, P. Schley, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
      Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
      Phys. Status Solidi A 203 (1), 42-49 (2006)
    • A.T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff
      Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
      Appl. Phys. Lett. 88 (2), 024101 (2006)
    • P. Streitenberger and D. Zöllner
      Effective growth law from three-dimensional grain growth simulations and new analytical grain size distribution
      Scripta Materialia 55 (5), 461-464 (2006)
    • D. Zöllner and P. Streitenberger
      Three Dimensional Normal Grain Growth: Monte Carlo Potts Model Simulation and Analytical Mean Field Theory
      Scripta Materialia 54 (9), 1697-1702 (2006)
    • S. Matichyn, M. Lisker, M. Silinskas, B. Garke, E. Burte
      Characterisation of Ferroelectric PbZrxTi1-xO3 (PZT) Thin Films Prepared by Liquid-Delivery Metalorganic Chemical Vapor Deposition
      Integrated Ferroelectrics 81, 289-295 (2006)


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