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Liste der Publikationen der Abteilung Materialphysik seit 2010. Die meisten Publikationen sind direkt verlinkt. Wenn Sie Interesse an einer unserer Publikationen haben, sie aber nicht erhalten können, sprechen Sie uns bitte direkt an!

2024

2023

2022

2021

2020

2019

2018

2017

2016

        • A. Minj, M.F. Romero, Y. Wang, Ö. Tuna, M. Feneberg, R. Goldhahn, G. Schmerber, P. Ruterana, C, Giesen, and M. Heuken
          Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
        • P. Streitenberger, D. Zöllner
          Enveloppen-Methode zur Auswertung von Größenverteilungen bei Vergröberungsprozessen
          In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 50, 235-240 (2016)
        • F. Tabataba-Vakili, T. Wunderer, M. Kneissl, Z. Yang, M. Teepe, M. Batres, M. Feneberg, B. Vancil, and N.M. Johnson
          Dominance of radiative recombination from electron-beam-pumped Deep-UV AlGaN multi-quantum-well heterostructures
        • D.O. Demchenko, N. Izyumskaya, M. Feneberg, V. Avrutin, Ü. Özgür, R. Goldhahn, and H. Morkoç
          Optical properties of the organic-inorganic hybrid perovskite CH3NH3PbI3: Theory and experiment
        • S. Freytag, M. Feneberg, C. Berger, J. Bläsing, A. Dadgar, G. Callsen, F. Nippert, A. Hoffmann, P. Bokov, and R. Goldhahn
          Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy
        • M.D. Neumann, N. Esser, J.-M. Chauveau, R. Goldhahn, and M. Feneberg
          Inversion of absorption anisotropy and bowing of crystal field splitting in wurtzite MgZnO
        • Y. Xie, M. Madel, M. Feneberg, B. Neuschl, W. Jie, X. Ma, and K. Thonke
          Oxygen vacancies induced DX center and persistent photoconductivity properties of high quality ZnO nanorods
        • M. Feneberg, J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J.S. Speck
          Many-electron effects on the dielectric function of cubic In2O3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift

2015

2014

        • M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn
          Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
        • P. Streitenberger
          Sadi Carnot in Magdeburg und die Begründung der Thermodynamik
          Monumenta Guerickiana (189), Heft 23/24, 147160, Magdeburg (2014)
        • H. Ravash, E. Specht, J. Vleugels, N. Moelans
          3D phase-field simulation and characterization of microstructure evolution during Liquid Phase Sintering
        • M. Feneberg, S. Osterburg, M.F. Romero, B. Garke, R. Goldhahn, M.D. Neumann, N. Esser, J. Yan, J. Zeng, J. Wang, and J. Li
          Optical properties of magnesium doped AlGaN (0.61 < x < 0.733)
        • B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T. Meisch, K. Forghani, F. Scholz, and M. Feneberg
          Composition dependent valence band order in c-oriented wurtzite AlGaN layers
        • M. Feneberg, S. Osterburg, K. Lange, C. Lidig, B. Garke, R. Goldhahn, E. Richter, C. Netzel, M.D. Neumann, N. Esser, S. Fritze, H. Witte, J. Bläsing, A. Dadgar, and A. Krost
          Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 1020 cm-3
        • P. Streitenberger, D. Zöllner
          Triple junction controlled grain growth in two-dimensional polycrystals and thin films: Self-similar growth laws and grain size distributions
        • M. Feneberg, C. Lidig, K. Lange, R. Goldhahn, M.D. Neumann, N. Esser, O. Bierwagen, M.E. White, M.Y. Tsai, and J.S. Speck
          Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV
        • C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, and M. Weyers
          Polarization of photoluminescence emission from semi-polar (1122) AlGaN layers
        • M. Feneberg, C. Lidig, K. Lange, M.E. White, M.Y. Tsai, J.S. Speck, O. Bierwagen, R. Goldhahn
          Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry

2013

        • C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M. Kneissl
          Excitonic recombination in epitaxial overgrown AlN on sapphire
        • B. Neuschl, K. Thonke, M. Feneberg, R. Goldhahn, T. Wunderer, Z. Yang, N.M. Johnson, J. Xie, S. Mita, A. Rice, R. Collazo, Z. Sitar
          Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
        • D. Zöllner, J. Dake and C.E. Krill
          Simulation der Korngrenzenmigration in polykristallinem Graphen
          In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 247-252 (2013)
        • S. Schäfer and D. Zöllner
          Triple-Junction-Winkel in diskretisierten digitalen Kornmikrostrukturen
          In: Fortschritte in der Metallographie, Praktische Metallographie Sonderband 45, publisher: G. Petzow, DGM INVENTUM, 309-314 (2013)
        • M. Wieneke, H. Witte, K. Lange, M. Feneberg, A. Dadgar, J. Bläsing, R. Goldhahn, and A. Krost
          Ge as a surfactant in metal-organic vapor phase epitaxy growth of a-plane GaN exceeding carrier concentrations of 1020 cm-3
        • M. Feneberg, M.F. Romero, M. Röppischer, C. Cobet, N. Esser, B. Neuschl, K. Thonke, M. Bickermann, and R. Goldhahn
          Anisotropic absorption and emission of bulk (1-100) AlN
        • F. Scholz, K. Forghani, M. Klein, O. Klein, U. Kaiser, B. Neuschl, I. Tischer, M. Feneberg, K. Thonke, S. Lazarev, S. Bauer, and T. Baumbach
          Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
        • M. Landmann, E. Rauls, W.G. Schmidt, M. Röppischer, C. Cobet, N. Esser, T. Schupp, D.J. As, M. Feneberg, and R. Goldhahn
          Transition energies and direct-indirect band gap crossing in zinc-blende AlxGa1-xN
        • M.F. Romero, M. Feneberg, P. Moser, C. Berger, J. Bläsing, A. Dadgar, A. Krost, E. Sakalauskas, F. Calle, R. Goldhahn
          Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
        • T. Brazzini, S. Pandey, M.F. Romero, P.Yu. Bokov, M. Feneberg, G. Tabares, A. Cavallini, R. Goldhahn, F. Calle
          Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection
        • M. Feneberg, M.F. Romero, B. Neuschl, K. Thonke, M. Röppischer, C. Cobet, N. Esser, M. Bickermann, and R. Goldhahn
          Negative spin-exchange splitting in the exciton fine structure of AlN
        • M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Petzoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Félix, J.M. Mánuel, F.M. Morales, D. Carvalho, T. Ben, R. Garcia, and G. Koblmüller
          N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

2012

2011

        • P. Streitenberger, D. Zöllner
          Einfluss von reduzierter Mobilität und Energie von Tripellinien und Quadrupelpunkten auf Kornwachstum
          In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 213-218 (2011)
        • D. Zöllner, P. Streitenberger, I. Fielden
          Einzelkornkinetik von Polykristallinen Materialien
          In: A. Wanner, M. Rettenmayr, Fortschritte in der Metallographie, Sonderbände der Praktischen Metallographie, ed. by G. Petzow, vol. 43, p. 189-194 (2011)
        • C. Kraft, M. Hädrich, H. Metzner, U. Reislöhner, P. Schley, R. Goldhahn
          Investigation of the Excitonic Luminescence Band of CdTe Solar Cells by Photoluminescence and Photoluminescence Excitation Spectroscopy
        • C. Kraft, A. Brömel, S. Schönherr, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn, W. Wesch, H. Metzner
          Phosphorus Implanted Cadmium Telluride Solar Cells
        • A. Riefer, F. Fuchs, C. Rödl, A. Schleife, F. Bechstedt, R. Goldhahn
          Interplay of excitonic effects and van Hove singularities in optical spectra: CaO and AlN polymorphs
        • M. Feneberg, M. Röppischer, N. Esser, C. Cobet, B. Neuschl, T. Meisch, K. Thonke, R. Goldhahn
          Synchrotron-based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N
        • M.D. Neumann, C. Cobet, N. Esser, B. Laumer, T.A. Wassner, M. Eickhoff, M. Feneberg, R. Goldhahn
          Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes
        • E. Sakalauskas, B. Reuters, L. Rahimzadeh Khoshroo, H. Kalisch, M. Heuken, A. Vescan, M. Röppischer, C. Cobet, G. Gobsch, R. Goldhahn
          Dielectric function and optical properties of quaternary AlInGaN alloys
        • A. Kraus, S. Hammadi, J. Hisek, R. Buß, H. Jönen, H. Bremers, U. Rossow, E. Sakalauskas, R. Goldhahn, A. Hangleiter
          Growth and characterization of InGaN by RF-MBE
        • G. Kunert, W. Freund, T. Aschenbrenner, C. Kruse, S. Figge, M. Schowalter, A. Rosenauer, J. Kalden, K. Sebald, J. Gutowski, M. Feneberg, I. Tischer, K. Fujan, K. Thonke, and D. Hommel
          Light-emitting diode based on mask- and catalyst-free grown N-polar GaN nanorods
        • R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar
          Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates
        • G. Rossbach, M. Feneberg, M. Röppischer, C. Werner, C. Cobet, N. Esser, T. Meisch, K. Thonke, A. Dadgar, J. Bläsing, A. Krost, and R. Goldhahn
          Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band-edge
        • K. Köhler, S. Müller, P. Waltereit, W. Pletschen, V. Polyakov, L. Kirste, H.P. Menner, P. Brückner, O. Ambacher, C. Buchheim, R. Goldhahn
          Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
        • I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen
          Stacking fault related luminescence features in semi-polar GaN
        • T. Wunderer, M. Feneberg, F. Lipski, J. Wang, R.A.R. Leute, S. Schwaiger, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, J. Christen, G.J. Beirne, M. Jetter, P. Michler, L. Schade, C. Vierheilig, U.T. Schwarz, D. Draeger, A. Hangleiter, and F. Scholz
          Three-dimensional GaN for semipolar light emitters
        • M. Jetter, C. Wächter, A. Mayer, M. Feneberg, K. Thonke, and P. Michler
          Quaternary AlInGaN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficient light emission
        • K. Forghani, M. Klein, F. Lipski, S. Schwaiger, J. Hertkorn, R.A.R. Leute, F. Scholz, M. Feneberg, B. Neuschl, K. Thonke, O. Klein, U. Kaiser, R. Gutt, and T. Passow
          High quality AlGaN epilayers grown on sapphire using SiN interlayers
        • I. Tischer, M. Feneberg, M. Schirra, H. Yacoub, R. Sauer, K. Thonke, T. Wunderer, F. Scholz, L. Dieterle, E. Müller, and D. Gerthsen
          I2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
        • Z. Gao, V. Carabelli, E. Carbone, E. Colombo, M. Dipalo, Ch. Mafredotti, A. Pasquarelli, M. Feneberg, K. Thonke, E. Vittone, and E. Kohn
          Transparent microelectrode array in diamond technology

2010

        • C. Kraft, H. Metzner, M. Hädrich, U. Reislöhner, P. Schley, G. Gobsch, R. Goldhahn
          Comprehensive photoluminescence study of chlorine activated polycrystalline cadmium telluride layers
        • B. Neuschl, K.J. Fujan, M. Feneberg, I. Tischer, K. Thonke, K. Forghani, M. Klein, and F. Scholz
          Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers
        • R. Dalmau, B. Moody, R. Schlesser, S. Mita, J. Xie, M. Feneberg, B. Neuschl, K. Thonke, R. Collazo, A. Rice, J. Tweedie, and Z. Sitar
          Growth and Characterization of AlN and AlGaN Epitaxial Films On AlN Single Crystal Substrates
        • T. Schupp, T. Meisch, B. Neuschl, M. Feneberg, K. Thonke, K. Lischka, and D.J. As
          Droplet epitaxy of zinc-blende GaN quantum dots
        • D. Zöllner, P. Streitenberger
          Characterisation of 3D Microstructural Evolution of Individual Grains
          Proc. 31st Risø Int. Symp. on Challenges in materials science and possibilities in 3D and 4D characterization techniques, ed. by N. Hansen, D. J. Jensen, S. F. Nielsen, H. F. Poulsen, B. Ralph, p. 505-513 (2010)
        • K.J. Fujan, M. Feneberg, B. Neuschl, I. Tischer, K. Thonke, S. Schwaiger, I. Izadi, F. Scholz, L. Lechner, J. Biskupek, and U. Kaiser
          Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
        • E. Sakalauskas, H. Behmenburg, C. Hums, P. Schley, G. Rossbach, C. Giesen, M. Heuken, H. Kalisch, R.H. Jansen, J. Bläsing, A. Dadgar, A. Krost and R. Goldhahn
          Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
        • M. Feneberg, R.A.R. Leute, B. Neuschl, K. Thonke, M. Bickermann
          High-excitation and high-resolution photoluminescence spectra of bulk AlN
        • P. Waltereit, W. Bronner, R. Quay, M. Dammann, S. Müller, K. Köhler, M. Mikulla, O. Ambacher, L. Harm, M. Lorenzini, T. Rödle, K. Riepe, K. Bellmann, C. Buchheim, R. Goldhahn
          Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency
        • F. Scholz, T. Wunderer, M. Feneberg, K. Thonke, A. Chuvilin, U. Kaiser, S. Metzner, F. Bertram, and J. Christen
          GaInN-based LED structures on selectively grown semi-polar crystal facets
        • I. Hotovy, J. Pezoldt, M. Kadlecikova, T. Kups, L. Spiess, J. Breza, E. Sakalauskas, R. Goldhahn, V. Rehacek
          Structural characterization of sputtered indium oxide films deposited at room temperature
        • M. Feneberg, K. Thonke, T. Wunderer, F. Lipski, and F. Scholz
          Piezoelectric polarization of semipolar and polar GaInN quantum wells grown on strained GaN templates
        • K. Thonke, M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, R. Sauer, J. Biskupek, and U. Kaiser
          The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
        • A. Romanyuk, V. Melnik, Y. Olikh, J. Biskupek, U. Kaiser, M. Feneberg, K. Thonke, and P. Oelhafen
          Light emission from nanocrystalline silicon clusters embedded in silicon dioxide: Role of the suboxide states
        • P. Schley, J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, J.S. Speck, R. Goldhahn
          Optical anisotropy of A- and M-plane InN grown on free-standing GaN substrates
        • E. Sakalauskas, P. Schley, J. Räthel, T.A. Klar, R. Müller, J. Pezoldt, K. Tonisch, J. Grandal, M.A. Sánchez-García, E. Calleja, A. Vilalta-Clemente, P. Ruterana, R. Goldhahn
          Optical properties of InN grown on Si(111) substrate
        • K. Köhler, S. Müller, R. Aidam, P. Waltereit, W. Pletschen, L. Kirste, H.P. Menner, W. Bronner, A. Leuther, R. Quay, M. Mikulla, O. Ambacher, R. Granzner, F. Schwierz, C. Buchheim, R. Goldhahn
          Influence of the surface potential on electrical properties of AlxGa1-xN/GaN heterostructures with different Al content: Effect of growth method

älter als 2010

(unvollständig)

        • M. Röppischer, R. Goldhahn, G. Rossbach, P. Schley, C. Cobet, N. Esser, T. Schupp, K. Lischka, D.J. As
          Dielectric function of zinc-blende AlN from 1 to 20 eV: Band gap and van Hove singularities
        • P. Waltereit, S. Müller, K. Bellmann, C. Buchheim, R. Goldhahn, K. Köhler, L. Kirste, M. Baeumler, M. Dammann, W. Bronner, R. Quay, O. Ambacher
          Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
        • M. Röppischer, R. Goldhahn, C. Buchheim, F. Furtmayr, T. Wassner, M. Eickhoff, C. Cobet, N. Esser (Editor's Choice)
          Analysis of polarization-dependent photoreflectance studies for c-plane GaN films grown on a-plane sapphire
        • J. Eberhardt, J. Cieslak, H. Metzner, Th. Hahn, R. Goldhahn, F. Hudert, J. Kräußlich, U. Kaiser, A. Chuvilin, U. Reislöhner, W. Witthuhn
          Epitaxial and polycrystalline CuInS2 layers: Structural metastability and its influence on the photoluminescence
        • C. Buchheim, M. Röppischer, R. Goldhahn, G. Gobsch, C. Cobet, C. Werner, N.Esser, A. Dadgar, M. Wieneke, J. Bläsing, A. Krost
          Influence of anisotropic strain on excitonic transitions in a-plane GaN films
        • F. Scholz, S. B. Thapa, M. Fikry, J. Hertkorn, T. Wunderer, F. Lipski, A. Reiser, Y. Xie, M. Feneberg, K. Thonke, R. Sauer, M. Dürrschnabel, L. D. Yao, and D. Gerthsen
          Epitaxial growth of coaxial GaInN-GaN hetero-nanotubes
        • D. Wahl, A. Ladenburger, M. Feneberg, W. Schoch, K. Thonke, and R. Sauer
          Semiconductor quantum dots through conversion of micelle-generated metal clusters
        • R. A. R. Leute, M. Feneberg, R. Sauer, K. Thonke, S. B. Thapa, F. Scholz, Y. Taniyasu, and M. Kasu
          Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
        • T. Wunderer, F. Lipski, S. Schwaiger, J. Hertkorn, M. Wiedenmann, M. Feneberg, K. Thonke, and F. Scholz
          Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
        • L. D. Yao, D. Weissenberger, M. Dürrschnabel, D. Gerthsen, I. Tischer, M. Wiedenmann, M. Feneberg, A. Reiser, and K. Thonke
          Structural and cathodoluminescence properties of ZnO nanorods after Ga-implantation and annealing
        • F. Scholz, T. Wunderer, B. Neubert, M. Feneberg, and K. Thonke
          GaN-based Light Emitting Diodes on Selectively Grown Semipolar Crystal Facets
        • M. Schirra, M. Feneberg, G. M. Prinz, A. Reiser, T. Röder, K. Thonke, and R. Sauer
          Beating of Coupled Ultraviolet Light Modes in Zinc Oxide Nanoresonators
        • D. Weissenberger, D. Gerthsen, A. Reiser, G. M. Prinz, M. Feneberg, K. Thonke, H. Zhou, J. Sartor, J. Fallert, C. Klingshirn, and H. Kalt
          Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods
        • F. Lipski, S.B. Thapa, J. Hertkorn, T. Wunderer, S. Schwaiger, F. Scholz, M. Feneberg, M. Wiedenmann, K. Thonke, H. Hochmuth, M. Lorenz, and M. Grundmann
          Studies towards freestanding GaN in hydride vapor phase epitaxy by in-situ etching of a sacrificial ZnO buffer layer
        • A. Reiser, V. Raeesi, G. M. Prinz, M. Schirra, M. Feneberg, U. Röder, R. Sauer, and K. Thonke
          Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates
        • K. Thonke, M. Schirra, R. Schneider, A. Reiser, G. M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, and R. Sauer
          The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures
        • J.S. Rojas-Ramírez, R. Goldhahn, P. Moser, J. Huerta-Ruelas, J. Hernándes-Rosas, M. López-López
          Temperature dependence of the photoluminescence emission from InxGa1-xAs quantum wells on GaAs(311) substrates
        • A. Schleife, C. Rödl, F. Fuchs, J. Furthmüller, F. Bechstedt, P.H. Jefferson, T.D. Veal, C.F. Mc Conville, L.F.J. Piper, A. DeMasi, K.E. Smith, H. Lösch, R. Goldhahn, C. Cobet, J. Zúñiga-Pérez, V. Muñoz-Sanjosé
          Ab-Initio Studies of Electronic and Spectroscopic Properties of MgO, ZnO and CdO
        • K. Tonisch, C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, R. Goldhahn
          Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
        • M. Feneberg, J. Däubler, K. Thonke, R. Sauer, P. Schley, R. Goldhahn
          Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
        • P. Schley, C. Napierala, R. Goldhahn, G. Gobsch, J. Schörmann, D. J. As, K. Lischka, M. Feneberg, K. Thonke, F. Fuchs, F. Bechstedt
          Band gap and effective electron mass of cubic InN
        • P. Schley, R. Goldhahn, C. Napierala, G. Gobsch, J. Schörmann, D.J. As, K. Lischka, M. Feneberg, K. Thonke
          Dielectric function of cubic InN from the mid-infrared to the visible spectral range
        • M. Rakel, C. Cobet, N. Esser, F. Fuchs, F. Bechstedt, R. Goldhahn, W.G. Schmidt, W. Schaff
          GaN and InN conduction-band states studied by ellipsometry
        • C. Buchheim, R. Goldhahn, G. Gobsch, K. Tonisch, V. Cimalla, F.Niebelschütz, O. Ambacher
          Electric field distribution in GaN/AlGaN/GaN heterostructures with two-dimensional electron and hole gas
        • C.P. Yeh, M. Lisker, V. Vezin, B. Seitzinger, P.K. Baumann, B. Garke, J. Bläsing, A. Krost, E.P. Burte
          Fabrication of ferroelectric PZT thin films by liquid delivery MOCVD using novel Zr and Ti precursors
        • P.D.C. King, T.D. Veal, C.F. McConville, F. Fuchs, J. Furthmüller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schörmann, D.J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, H. Lu, W.J. Schaff
          Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
        • J. Eberhardt, H. Metzner, K. Schulz, U. Reislöhner, Th. Hahn, J. Cieslak, W. Witthuhn, R. Goldhahn, F. Hudert, J. Kräußlich
          Excitonic luminescence of polycrystalline CuInS2 solar cell material under the influence of strain
        • C. Buchheim, R. Goldhahn, A.T. Winzer, G. Gobsch, U. Rossow, D. Fuhrmann, A. Hangleiter, F. Furtmayr, M. Eickhoff
          Stark shift of interband transitions in AlN/GaN superlattices
        • P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W.J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, N. Esser
          Dielectric function and Van Hove singularities for In-rich InxGa1-xN alloys: Comparison of N- and metal-face materials
        • J. Eberhardt, K. Schulz, H. Metzner, J. Cieslak, Th. Hahn, U. Reislöhner, M. Gossla, F. Hudert, R. Goldhahn, W. Witthuhn
          Epitaxial and polycrystalline CuInS2 thin films: A comparison of opto-electronic properties
        • R. Goldhahn, A.T. Winzer, A. Dadgar, A. Krost, O. Weidemann, M. Eickhoff (Editor's Choice)
          Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction
        • J. Schörmann, D.J. As, K. Lischka, P. Schley, R. Goldhahn, S.F. Li, W. Löffler, M. Hetterich, H. Kalt
          Molecular beam epitaxy of phase pure cubic InN
          Appl. Phys. Lett. 89 (26), 261903 (2006)
        • V. Cimalla, V. Lebedev, F.M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher
          Origin of n-type conductivity in nominally undoped InN
          Materialwissenschaft und Werkstofftechnik 37 (11), 924-928 (2006)
        • V. Cimalla, V. Lebedev, F.M. Morales, R. Goldhahn, O. Ambacher
          Model for the thickness dependence of electron concentration in InN films
          Appl. Phys. Lett. 89, 172109 (2006)
        • V.G. Talalaev, J.W. Tomm, A.S. Sokolov, I.V. Shtrom, B.V. Novikov, A.T. Winzer, R. Goldhahn, G. Gobsch, N.D. Zakharov, P. Werner, U. Gösele, G.E. Cirlin, A.A. Tonkikh, V.M. Ustinov, G.G. Tarasov
          Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field
          J. Appl. Phys. 100 (8), 083704 (2006)
        • A.T. Winzer, G. Gobsch, R. Goldhahn, D. Fuhrmann, A. Hangleiter, A. Dadgar, A. Krost
          Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment
          Phys. Rev. B 74 (12), 125207 (2006)
        • C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, O. Ambacher
          Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy
          Phys. Status Solidi C 3 (6), 2009-2013 (2006)
        • V. Cimalla , M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, W. J. Schaff
          The conductivity of Mg-doped InN
          Phys. Status Solidi C 3 (6), 1721-1724 (2006)
        • P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
          Transition energies and Stokes shift analysis for In-rich InGaN alloys
          Phys. Status Solidi B 243 (7), 1572-1576 (2006)
        • R. Goldhahn, P. Schley, A.T. Winzer, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
          Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN
          J. Cryst. Growth 288 (2), 273-277 (2006)
        • R. Goldhahn, P. Schley, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff
          Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
          Phys. Status Solidi A 203 (1), 42-49 (2006)
        • A.T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff
          Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
          Appl. Phys. Lett. 88 (2), 024101 (2006)
        • P. Streitenberger and D. Zöllner
          Effective growth law from three-dimensional grain growth simulations and new analytical grain size distribution
          Scripta Materialia 55 (5), 461-464 (2006)
        • D. Zöllner and P. Streitenberger
          Three Dimensional Normal Grain Growth: Monte Carlo Potts Model Simulation and Analytical Mean Field Theory
          Scripta Materialia 54 (9), 1697-1702 (2006)
        • S. Matichyn, M. Lisker, M. Silinskas, B. Garke, E. Burte
          Characterisation of Ferroelectric PbZrxTi1-xO3 (PZT) Thin Films Prepared by Liquid-Delivery Metalorganic Chemical Vapor Deposition
          Integrated Ferroelectrics 81, 289-295 (2006)


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